Device for synthesis of graphene, CVD Equipment Corporation

An advanced Chemical Vapour Deposition process development tool controlled by proprietary real-time process control software that provides recipe driven process control, real-time graphing and automatic data logging for optimal process reproducibilit

Contacts and Location

Contact 1	jana Andžāne
	Enquire about this equipment
Organisational Unit	Institute of Chemical Physics University of Latvia

Description

An advanced Chemical Vapour Deposition process development tool controlled by proprietary real-time process control software that provides recipe driven process control, real-time graphing and automatic data logging for optimal process reproducibility

Specification

CVD synthesis of monolayer and multilayer graphene on copper and nickel substrates (max substrate size 2.5cmx5cm)
3-zone resistance furnace for temperatures up to 1100oC,
Low (75 Torr) and atmospheric pressure operation,
Cantilevered automatic substrate loading/unloading system,
Vacuum monitoring system,
4 mass flow controlled UHP gas lines

Services

Monolayer and multilayer graphene synthesis on copper and nickel substrates (max size of a substrate 2.5cmx5cm. At the moment the recipe is developed only for synthesis of monolayer graphene on copper substrates.

Device for synthesis of graphene, CVD Equipment Corporation

An advanced Chemical Vapour Deposition process development tool controlled by proprietary real-time process control software that provides recipe driven process control, real-time graphing and automatic data logging for optimal process reproducibilit

Similar equipment

A chemical vapor deposition (CVD) facility for graphene synthesis

Thermal chemical reactor for solids and gases, MTI corporation

Incubator- shaker Innova 26R, Eppendorf

Microwave vacuum drying equipment

Thermogravimetric analyser with function of differential thermal analysis, (TGA/SDTA)