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E-beam Lithography System

This EBL equipment can be used to design and fabricate the nanostructures.

Contacts and Location

Contact 1 Raimonds Meija
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Organisational Unit Institute of Chemical Physics
    University of Latvia

Description

This EBL equipment can be used to design and fabricate the nanostructures.

Specification

  • 2.5 MHz DAC addressing for beam deflection;
  • Pattern generator from ELPHY with GDSII editor, compatible with DXF and CIF format.
  • Column settings:
    • HV range – 0.5kV – 30kV;
    • Apertures – 50, 100 μm;
    • Low magnification mode 30x – 2000x
    • High magnification mode 100x – 800000x

Services

This equipment can be used for the nanopatterning of the flat surfaces with the finest feature size below 50 nm. High spatial alignment accuracy can be provided for the samples with pre-patterned structures.

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Manufacturer

RAITH HITACHI

Model

Raith Elphy Quantum, installed on Hitachi S-4800 Field Emission SEM

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